Lam is officially one of Forbes' World's Best Employers for 2024! We're proud of our culture of inclusion, innovation, and respect. Want to be part of a team that’s making a difference in the tech world? Join us and let’s prove what’s possible!
The book is officially closed on the 2024 FIRST Global Challenge! Did you know in 2023, we began a three-year, $10 million investment to FIRST Global? We take pride in supporting FIRST Global as they inspire the world’s two billion youth to pursue STEM fields and become future leaders, solving the world’s most pressing issues. A round of applause to this year's competitors. 👏
How can virtual experimentation save chipmakers time and money? Dive into our recent study using SEMulator3D® virtual process modeling, where we simulated and tested Metal-Oxide-Metal (MOM) designs without the need for lengthy, expensive silicon-based methods.
Our Senior Director of Advanced Packaging Chee Ping Lee dives into our latest innovations across the 2.5D and 3D packaging space in a recent TechArena podcast. Give it a listen!
Introducing Lam Cryo™ 3.0 — our latest breakthrough in etch technology. Discover how this technological advancement serves as a testament to our commitment to innovation, customer success, and more.
How do we tackle the ever-increasing demand for global data storage and faster data transfers? With the launch of Lam Cryo™ 3.0 we are pushing the boundaries of HAR etch technology to enable the path to 1,000-layer 3D NAND to meet the needs of the AI era head on.
The path to 1,000-layer 3D NAND is more than an aspiration; it’s a necessity driven by the increasing demands of AI. As a leader in etch and deposition technology, we’re committed to delivering innovations for even the most complex challenges associated with 3D NAND scaling. Learn why etching will be key to meeting future demands for global data processing and storage.
3D NAND memory capacity, dependent on the number of oxide and nitride layers, begins with etching near-perfect cylindrical holes. The challenge of etching these deep and precise high aspect ratio (HAR) holes increases with the number of layers. Our solution? Pulsed power plasma technology innovations and cryogenic etching. With 1,000-layer 3D NAND projected by the end of the decade, discover why these etching breakthroughs are key to enabling the scaling 3D NAND for the AI era.
With conventional DRAM devices becoming smaller, an increase in parasitic capacitance significantly hinders performance. To evaluate parasitic capacitance between the 6F2 and 4F2 DRAM devices, we leveraged our SEMulator3D® platform. Discover why 4F2 DRAM will be the architecture of choice.
We’re heading to San Francisco for #SEMICONWest from July 9 to 11! Join us to explore innovations transforming the semiconductor industry, network with industry leaders, and more.
